| PART |
Description |
Maker |
| MMDF3200Z |
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MMDF2N05ZR2_D MMDF2N05ZR2 ON2162 ON2161 |
From old datasheet system
DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS
Medium Power Surface Mount Products
CONNECTOR ACCESSORY
|
MOTOROLA[Motorola, Inc]
ON Semi
Motorola, Inc.
|
| MMDF1N05E MMDF1N05E_D ON2150 |
DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM
Medium Power Surface Mount Products
From old datasheet system
|
Motorola, Inc
ON Semi
|
| MMDF2N06VL |
DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 42 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MMSF10N02Z ON2248 MMSF10N02ZR2 ON2247 |
From old datasheet system
SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS
10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
|
| MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
|
ON Semiconductor
Motorola, Inc
|
| MTV10N100E_D ON2669 MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 1000 VOLTS
|
ON Semiconductor
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
